RQK0608BQDQS Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

RQK0608BQDQS
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
R_DS(on) = 120 mΩ typ.(at V_GS = 4.5 V, I_D = 1.6 A)
• Low drive current
• High speed switching
• V_DSS : 60 V and capable of 2.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK ^R )
1
2
3
1G
4
Note: Marking is “BQ“.
REJ03G1621-0100
Rev.1.00
Mar 03, 2008
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
60
±12
3.2
10
3.2
1.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
REJ03G1621-0100 Rev.1.00 Mar 03, 2008
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