RQK0606KGDQA Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

RQK0606KGDQA
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
R_DS(on) = 173 mΩ typ.(at V_GS = 4.5 V, I_D = 0.8 A)
• Low drive current
• High speed switching
• V_DSS ≥ 60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Notes: Marking is “KG“.
REJ03G1497-0100
Rev.1.00
Jan 15, 2007
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_D(pulse) ^Note1
Body - drain diode reverse drain current
Channel dissipation
I_DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
60
±12
1.5
6
1.5
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.1.00 Jan 15, 2007 page 1 of 7