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RQK0604IGDQA Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching | |||
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RQK0604IGDQA
Silicon N Channel MOS FET
Power Switching
Features
⢠Low on-resistance
RDS(on) = 111 m⦠typ.(at VGS = 4.5 V, ID = 1 A)
⢠Low drive current
⢠High speed switching
⢠VDSS ⥠60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is âIGâ.
REJ03G1496-0100
Rev.1.00
Jan 15, 2007
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse) Note1
Body - drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ⤠10 µs, Duty cycle ⤠1%
2. When using the glass epoxy board (FR-4 40 Ã 40 Ã 1 mm)
Ratings
60
±12
2
8
2
0.8
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.1.00 Jan 15, 2007 page 1 of 7
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