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RQK0601AGDQS Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching | |||
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RQK0601AGDQS
Silicon N Channel MOS FET
Power Switching
Features
⢠Low on-resistance
RDS(on) = 56 m⦠typ (VGS = 10 V, ID = 2.5 A)
⢠Low drive current
⢠High speed switching
⢠4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
Note: Marking is âAGâ.
REJ03G0575-0400
Rev.4.00
Jun 22, 2006
2, 4
D
1. Gate
1G
2. Drain
3. Source
4. Drain
S
3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch
Note1
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ⤠1 s, duty cycle ⤠1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
60
±20
5
7.3
5
1.5
5
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.4.00 Jun 22, 2006 page 1 of 6
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