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RQK0201QGDQA Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching | |||
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RQK0201QGDQA
Silicon N Channel MOS FET
Power Switching
Features
⢠Low on-resistance
RDS(on) = 25 m⦠typ (VGS = 4.5 V, ID = 2.4 A)
⢠Low drive current
⢠High speed switching
⢠2.5 V gate drive
Outline
REJ03G1321-0300
Rev.3.00
Jun 12, 2006
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
G
1. Source
2
2
2. Gate
3. Drain
S
1
Note: Marking is âQGâ.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse) Note1
Body - drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
20
±12
4.5
15
4.5
0.8
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.3.00 Jun 12, 2006 page 1 of 6
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