RQJ0603LGDQA_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

RQJ0603LGDQA
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
R_DS(on) = 158 mΩ typ (V_GS = –10 V, I_D = –0.9 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “LG”.
Preliminary Datasheet
R07DS0300EJ0600
Rev.6.00
Jan 10, 2014
3
D
G
1. Source
2
2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
V_DSS
V_GSS
I_D
I_D(Pulse) ^Note1
I_DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Ratings
–60
+10 / –20
–1.8
–4.5
–1.8
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0300EJ0600 Rev.6.00
Jan 10, 2014
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