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RQJ0603LGDQA Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching | |||
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RQJ0603LGDQA
Silicon P Channel MOS FET
Power Switching
Features
⢠Low on-resistance
RDS(on) = 158 m⦠typ (VGS = â10 V, ID = â0.9 A)
⢠Low drive current
⢠High speed switching
⢠4.5 V gate drive
Outline
REJ03G1274-0400
Rev.4.00
May 26, 2006
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
G
1. Source
2
2
2. Gate
3. Drain
S
1
Note: Marking is âLGâ.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(Pulse) Note1
Body - drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. When using the glass epoxy board (FR-4: 40 Ã 40 Ã 1 mm)
Ratings
â60
+10 / â20
â1.8
â4.5
â1.8
0.8
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.4.00, May 26, 2006, page 1 of 6
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