RQJ0602EGDQS Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

RQJ0602EGDQS
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
R_DS(on) = 485 mΩ typ (V_GS = –10 V, I_D = –0.75 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK ^R )
1
2
3
4
Note: Marking is “EG”.
REJ03G1268-0300
Rev.3.00
Jun 05, 2006
2, 4
D
1. Gate
1G
2. Drain
3. Source
4. Drain
S
3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_D
Note1
(pulse)
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
I_DR
Pch ^Note2
Pch
Note1
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 1 s, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
–60
+10 / –20
–1.5
–2.2
–1.5
1.5
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.3.00 Jun 05, 2006 page 1 of 6