RQJ0602EGDQA Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

RQJ0602EGDQA
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
R_DS(on) = 490 mΩ typ (V_GS = –10 V, I_D = –0.55 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
REJ03G1273-0400
Rev.4.00
May 26, 2006
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
G
1. Source
2
2
2. Gate
3. Drain
S
1
Note: Marking is “EG”.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_D(Pulse) ^Note1
Body - drain diode reverse drain current
Channel dissipation
I_DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Ratings
–60
+10 / –20
–1.1
–3
–1.1
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.4.00, May 26, 2006, page 1 of 6