RQJ0306FQDQS Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

RQJ0306FQDQS
Silicon P Channel MOS FET
Power Switching
Features
• Low gate drive
V_DSS : –30 V and 2.5 V gate drive
• Low drive current
• High speed switching
• Small traditional power package (UPAK)
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK ^R )
1
2
3
1G
4
Notes: Marking is "FQ".
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Thermal resistance
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
Pch ^Note2
Rth(ch-a) ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
REJ03G1780-0100
Rev.1.00
Mar 16, 2009
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Ratings
–30
+8 / –12
–4
–16
4
1.5
83
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C /W
°C
°C
REJ03G1780-0100 Rev.1.00 Mar 16, 2009
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