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RQJ0305EQDQS Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching | |||
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RQJ0305EQDQS
Silicon P Channel MOS FET
Power Switching
Features
⢠Low gate drive
VDSS : â30 V and 2.5 V gate drive
⢠Low drive current
⢠High speed switching
⢠Small traditional power package (UPAK)
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
1G
4
Notes: Marking is "EQ".
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Thermal resistance
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Rth(ch-a) Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ⤠10 µs, Duty cycle ⤠1%
2. When using the glass epoxy board (FR-4 40 Ã 40 Ã 1 mm)
REJ03G1779-0100
Rev.1.00
Mar 16, 2009
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Ratings
â30
+8 / â12
â3.4
â12
3.4
1.5
83
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C /W
°C
°C
REJ03G1779-0100 Rev.1.00 Mar 16, 2009
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