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RQJ0201UGDQA_11 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching | |||
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RQJ0201UGDQA
Silicon P Channel MOS FET
Power Switching
Features
ï· Low on-resistance
RDS(on) = 53 mï typ (VGS = â4.5 V, ID = â1.8 A)
ï· Low drive current
ï· High speed switching
ï· 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is âUGâ.
Preliminary Datasheet
R07DS0290EJ0400
(Previous: REJ03G1317-0300)
Rev.4.00
Mar 28, 2011
3
D
G
1. Source
2
2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch(pulse) Note2
Tch
Storage temperature
Tstg
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
â20
+8 / â12
â3.4
â10
â3.4
0.8
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
ï°C
ï°C
R07DS0290EJ0400 Rev.4.00
Mar 28, 2011
Page 1 of 6
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