RQG2001URAQF Datasheet, PDF (1/27 Pages) Renesas Technology Corp – NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier

RQG2001URAQF
NPN Silicon Germanium Transistor
High Frequency Medium Power Amplifier
Features
• Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
• Low Distortion and Excellent Linearity
IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz
• High Transition Frequency
f_T = 20 GHz typ.
• High Collector to Emitter Voltage
V_CEO = 5 V
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
Note: Marking is “UR-”.
2
3
1
4
1. Emitter
2. Collector
3. Emitter
4. Base
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
V_CBO
Collector to emitter voltage
V_CEO
Emitter to base voltage
V_EBO
Collector current
I_C
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Value on PCB (FR-4 : 20 x 20 x 1.0 mm double side)
Ratings
13
5
1.5
100
450 ^note1
150
–55 to +150
REJ03G1554-0100
Rev.1.00
Aug 10, 2007
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
REJ03G1554-0100 Rev.1.00 Aug 10, 2007
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