RQG1004UPAQL Datasheet, PDF (1/19 Pages) Renesas Technology Corp – NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

RQG1004UPAQL
NPN Silicon Germanium Transistor
High Frequency Low Noise Amplifier
Features
• Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc.
• High gain and low noise.
MSG = 25 dB typ. , NF = 0.65 dB typ. at V_CE = 2 V, I_C = 5 mA, f = 0.9 GHz
MSG = 22 dB typ. , NF = 0.75 dB typ. at V_CE = 2 V, I_C = 5 mA, f = 1.8 GHz
MSG = 21 dB typ. , NF = 0.85 dB typ. at V_CE = 2 V, I_C = 5 mA, f = 2.4 GHz
MSG = 15 dB typ. , NF = 1.3 dB typ. at V_CE = 2 V, I_C = 10 mA, f = 5.8 GHz
• High transition frequency
f_T = 41 GHz typ.
• Small and low height package
MFPAK-4 (1.4 x 0.8 x 0.55(max) mm)
Outline
RENESAS package code: PUSF0004ZA-A
(Package name: MFPAK-4)
Note: Marking is “UP-”.
2
3
1
4
1.Emitter
2.Collector
3.Emitter
4.Base
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
V_CBO
V_CEO
V_EBO
I_C
Pc
Pc
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Value on PCB (FR-4 : 40 x 40 x 1.6mm double side)
Ratings
8
3.5
1.2
35
80
200 ^note1
150
–55 to +150
REJ03G1552-0100
Rev.1.00
Jul 20, 2007
(Ta = 25°C)
Unit
V
V
V
mA
mW
mW
°C
°C
REJ03G1552-0100 Rev.1.00 Jul 20, 2007
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