RQG1003UQAQF Datasheet, PDF (1/17 Pages) Renesas Technology Corp – NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

RQG1003UQAQF
NPN Silicon Germanium Transistor
High Frequency Low Noise Amplifier
Features
• Ideal for LNA applications. e.g. Tuner, Wireless LAN Cordless phone and etc.
• High gain and low noise.
MSG = 26 dB typ., NF = 0.55 dB typ. at V_CE = 2 V, I_C = 10 mA, f = 0.9 GHz
MSG = 22 dB typ., NF = 0.65 dB typ. at V_CE = 2 V, I_C = 10 mA, f = 1.8 GHz
MSG = 20 dB typ., NF = 0.75 dB typ. at V_CE = 2 V, I_C = 10 mA, f = 2.4 GHz
MSG = 14 dB typ., NF = 1.2 dB typ. at V_CE = 2 V, I_C = 10 mA, f = 5.8 GHz
• High transition frequency
f_T = 36 GHz typ.
• CMPAK-4 (2.0 x 1.25 x 1.1(max) mm)
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
Note: Marking is “UQ-”.
2
3
1
4
1. Emitter
2. Collector
3. Emitter
4. Base
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
V_CBO
Collector to emitter voltage
V_CEO
Emitter to base voltage
V_EBO
Collector current
I_C
Pc
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Value on PCB (FR-4 : 40 x 40 x 1.6mm double side)
Ratings
8
3.5
1.2
35
100
250 ^note1
150
–55 to +150
REJ03G1538-0100
Rev.1.00
Jul 20, 2007
(Ta = 25°C)
Unit
V
V
V
mA
mW
mW
°C
°C
REJ03G1538-0100 Rev.1.00 Jul 20, 2007
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