RQA0014XXDQS Datasheet, PDF (1/15 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET

RQA0014XXDQS
Silicon N-Channel MOS FET
Features
• High output power, High gain, High efficiency
Pout = +28.5 dBm, Linear Gain = 20 dB, PAE = 60% (f = 450 MHz)
• Suitable for UHF driver stage of high power transmission amplifiers
• Electrostatic Discharge Immunity Test (IEC Standard 61000-4-2, Level 4)
Outline
REJ03G1704-0100
Rev.1.00
Oct 20, 2008
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK ^R )
3
1
2
4
Note: Marking is “XX”.
1. Gate
2. Source
3. Drain
4. Source
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
Pch^note
Tch
Tstg
Ratings
14
±5
0.3
3
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
REJ03G1704-0100 Rev.1.00 Oct 20, 2008
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