RQA0011DNS Datasheet, PDF (1/18 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET

RQA0011DNS
Silicon N-Channel MOS FET
Features
• High output power, High gain, High efficiency
Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz)
• Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm)
• Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PWSN0002ZA-B
(Package name: HWSON-2 <WSON0504-2>)
3
3
2
1
1
3
2
1
2
Note: Marking is “RQA0011”.
REJ03G1600-0100
Rev.1.00
Nov 08, 2007
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
Pch^note
Tch
Tstg
Ratings
16
±5
3.8
15
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1600-0100 Rev.1.00 Nov 08, 2007
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