RQA0008RXDQS Datasheet, PDF (1/13 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET

RQA0008RXDQS
Silicon N-Channel MOS FET
Features
• High Output Power, High Gain, High Efficiency
Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz)
• Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK ^R )
3
1
2
3
1
4
REJ03G1326-0100
Rev.1.00
Oct 16, 2006
1. Gate
2. Source
3. Drain
4. Source
Note: Marking is “RX”.
2, 4
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note1: Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
Pch^note1
Tch
Tstg
Ratings
16
±5
2.4
10
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.
Rev.1.00 Oct 16, 2006 page 1 of 12