RQA0005MXAQS Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET

RQA0005MXAQS
Silicon N-Channel MOS FET
Features
• High Output Power, High Gain, High Efficiency
Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
• Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK ^R )
3
321
1
4
REJ03G1568-0100
Rev.1.00
Jul 04, 2007
1. Gate
2. Source
3. Drain
4. Source
Note: Marking is “MX”.
2, 4
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
Pch^note
Tch
Tstg
Ratings
16
±5
0.8
9
150
–50 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1568-0100 Rev.1.00 Jul 04, 2007
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