RQA0004PXDQS_11 Datasheet, PDF (1/15 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET

RQA0004PXDQS
Silicon N-Channel MOS FET
Features
 High Output Power, High Efficiency
Pout = +29.7 dBm, PAE = 68% (f = 520 MHz)
 Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK)
321
1
4
Preliminary Datasheet
R07DS0418EJ0300
Rev.3.00
Sep 09, 2011
3
1. Gate
2. Source
3. Drain
4. Source
2, 4
Note: Marking is “PX”.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25C
Symbol
V_DSS
V_GSS
I_D
Pch^note
Tch
Tstg
Ratings
16
±5
0.3
3
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
W
C
C
This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.
R07DS0418EJ0300 Rev.3.00
Sep 09, 2011
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