RQA0001DNS Datasheet, PDF (1/13 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET

RQA0001DNS
Silicon N-Channel MOS FET
Features
• High Output Power, High Gain, High Efficiency
Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
• Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)
Outline
RENESAS Package code: PWSN0002ZA-A
(Package name: HWSON-2 <WSON0303-2>)
3
3
2
1
1
3
2
1
2
Note: Marking is “A0001”.
REJ03G0582-0300
Rev.3.00
Oct 11, 2006
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
Pch^note
Tch
Tstg
Ratings
16
±5
0.8
5
150
–50 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.
Rev.3.00 Oct 11, 2006 page 1 of 12