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RJU60C6WDPK-M0 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 600V - 50A - Dual Diode Super Fast Recovery Diode
RJU60C6WDPK-M0
600V - 50A - Dual Diode
Super Fast Recovery Diode
Preliminary Datasheet
R07DS0875EJ0100
Rev.1.00
Sep 03, 2012
Features
 Fast reverse recovery time: trr = 100 ns typ. (at IF = 30 A, di/dt = 100 A/s) Per Leg
 Low forward voltage: VF = 1.4 V typ. (at IF = 50 A) Per Leg
 Low reverse current: IR = 1 A max. (at VR = 600 V) Per Leg
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
12 3
2, 4
1
3
1. Anode
2. Cathode
3. Anode
4. Cathode
Absolute Maximum Ratings
Item
Maximum reverse voltage
Continuous forward current
(Per Leg/Device)
Tc = 25C
Tc = 100C
Peak surge forward current (Per Leg/Device)
Junction to case thermal resistance
Junction temperature
Storage temperature
Notes: 1. Per leg/device
Symbol
VRM
IF Note1
IF Note1
IFSM Note1
j-cd
Tj
Tstg
Ratings
600
50/100
25/50
140/280
1.28
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
A
C/W
C
C
Electrical Characteristics
Item
Forward voltage
Reverse current
Reverse recovery time
Notes: 1. Per leg/device
2. Per leg
(Ta = 25°C)
Symbol Min
Typ
Max
Unit
Test conditions
VF Note2

1.4
2.0
V IF = 50 A
IR Note1


1/2
A VR = 600 V
trr Note2

100

ns IF = 30 A, di/dt = 100 A/s
R07DS0875EJ0100 Rev.1.00
Sep 03, 2012
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