RJU36B2WDPK-M0 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Dual Diode Ultra Fast Recovery Diode

RJU36B2WDPK-M0
Dual Diode
Ultra Fast Recovery Diode
Preliminary Datasheet
R07DS0668EJ0100
Rev.1.00
Mar 01, 2012
Features
 Ultra fast reverse recovery time: t_rr = 40 ns typ. (at I_F = 20 A, di/dt = 100 A/s)
 Low forward voltage: V_F = 1.1 V typ. (at I_F = 20 A)
 Low reverse current: I_R = 1 A max. (at V_R = 360 V)
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
12 ₃
2, 4
1
3
1. Anode
2. Cathode
3. Anode
4. Cathode
Absolute Maximum Ratings
Item
Maximum reverse voltage
Continuous forward current Tc = 25C
Tc = 100C
Peak surge forward current
Junction to case thermal resistance
Junction temperature
Storage temperature
Note: Per leg/device
Electrical Characteristics
Item
Forward Voltage
Reverse current
Reverse Recovery Time
Symbol Min
V_F

I_R

t_rr

Symbol
V_RM
I_F ^Note
I_F ^Note
I_FSM ^Note
j-cd
Tj
Tstg
Typ
Max
1.1
1.5

1
40

Ratings
360
20/40
10/20
80/160
2.4
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
A
C/W
C
C
(Ta = 25°C)
Unit
Test conditions
V I_F = 20 A
A V_R = 360 V
ns I_F = 20 A, di/dt = 100 A/s
R07DS0668EJ0100 Rev.1.00
Mar 01, 2012
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