RJU36B2WDPF_15 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 360V - 40A - Dual Diode Ultra Fast Recovery Diode

RJU36B2WDPF
360V - 40A - Dual Diode
Ultra Fast Recovery Diode
Preliminary Datasheet
R07DS1136EJ0300
Rev.3.00
Dec 06, 2013
Features
• Ultra fast reverse recovery time: t_rr = 40 ns typ. (at I_F = 10 A, di/dt = 100 A/μs)
• Low forward voltage: V_F = 1.1 V typ. (at I_F = 20 A)
• Low reverse current: I_R = 1 μA max. (at V_R = 360 V)
Outline
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
123
2, 4
1
3
1. Anode
2. Cathode
3. Anode
4. Cathode
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Maximum reverse voltage
Continuous forward current Tc = 25°C
Tc = 100°C
Peak surge forward current
Junction to case thermal resistance
Junction temperature
V_RM
I_F ^Note1
I_F ^Note1
I_FSM ^Note1
θj-cd
Tj ^Note2
360
20/40
10/20
80/160
2.78
175
V
A
A
A
°C/W
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Per leg/device
2. Please use this device in the thermal conditions where the junction temperature does not exceed 175°C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj=175°C.
Electrical Characteristics
Item
Forward voltage
Reverse current
Reverse recovery time
(Ta = 25°C)
Symbol Min
Typ
Max
Unit
Test conditions
V_FNote1
⎯
I_RNote1
⎯
1.1
1.5
V I_F = 20 A
⎯
1
μA V_R = 360 V
t_rrNote1
⎯
40
⎯
ns I_F = 10 A, di/dt = 100 A/μs
R07DS1136EJ0300 Rev.3.00
Dec 06, 2013
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