RJS6005WDPK Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 600V - 30A - Diode SiC Schottky Barrier Diode

RJS6005WDPK
600V - 30A - Diode
SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diode
• No reverse recovery / No forward recovery
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
12 ₃
Preliminary Datasheet
R07DS0901EJ0201
Rev.2.01
Jan 31, 2014
2, 4
1
3
1. Anode
2. Cathode
3. Anode
4. Cathode
Absolute Maximum Ratings
Item
Maximum reverse voltage
Continuous forward current
Peak surge forward current
Junction temperature
Storage temperature
Notes: 1. Per leg/device
Symbol
V_RM
I_F ^Note1
I_FSM ^Note1
Tj
Tstg
Electrical Characteristics
Item
Forward voltage
Reverse current
Reverse recovery time
Notes: 1. Per leg/device
2. Per leg
Symbol
V_F ^Note2
I_R ^Note1
t_rr ^Note2
Min
⎯
⎯
⎯
Typ
1.5
⎯
15
Ratings
600
15/30
90/180
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
°C
°C
Max
1.8
10/20
⎯
(Ta = 25°C)
Unit
Test conditions
V I_F = 15 A
μA V_R = 600 V
ns I_F = 15 A, di/dt = –300A/μs
R07DS0901EJ0201Rev.2.01
Jan 31, 2014
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