RJS6005TDPPEJ Datasheet, PDF (1/4 Pages) Renesas Technology Corp – SiC Schottky Barrier Diode

RJS6005TDPP-EJ
600V - 15A - Diode
SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diode
• No reverse recovery / No forward recovery
Outline
RENESAS Package code: PRSS0002ZA-A
(Package name: TO-220FP-2L)
12
Preliminary Datasheet
R07DS0900EJ0300
Rev.3.00
Jan 23, 2014
1
1. Cathode
2. Anode
2
Absolute Maximum Ratings
Item
Maximum reverse voltage
Continuous forward current
Peak surge forward current
Junction temperature
Storage temperature
Electrical Characteristics
Symbol
V_RM
I_F
I_FSM
Tj
Tstg
Item
Forward voltage
Reverse current
Reverse recovery time
Symbol Min
Typ
V_F
⎯
1.5
I_R
⎯
⎯
t_rr
⎯
15
Ratings
600
15
90
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
°C
°C
(Ta = 25°C)
Max
Unit
Test conditions
1.8
V I_F = 15 A
10
μA V_R = 600 V
⎯
ns I_F = 15 A, di/dt = 300A/μs
R07DS0900EJ0300 Rev.3.00
Jan 23, 2014
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