RJS6004WDPK_15 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 600V - 20A - Diode SiC Schottky Barrier Diode

RJS6004WDPK
600V - 20A - Diode
SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diode
• No reverse recovery / No forward recovery
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
12 ₃
Preliminary Datasheet
R07DS0897EJ0300
Rev.3.00
Jan 29, 2014
2, 4
1
3
1. Anode
2. Cathode
3. Anode
4. Cathode
Absolute Maximum Ratings
Item
Maximum reverse voltage
Continuous forward current
Peak surge forward current
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Per leg/device
Electrical Characteristics
Symbol
V_RM
I_F ^Note1
I_FSM ^Note1
θj-c
Tj
Tstg
Item
Forward voltage
Reverse current
Reverse recovery time
Notes: 1. Per leg/device
2. Per leg
Symbol
V_F ^Note2
I_R ^Note1
t_rr ^Note2
Min
⎯
⎯
⎯
Typ
1.5
⎯
15
Ratings
600
10/20
60/120
0.9
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
°C/W
°C
°C
Max
1.8
10/20
⎯
(Ta = 25°C)
Unit
Test conditions
V I_F = 10 A
μA V_R = 600 V
ns I_F = 10 A, di/dt = 300A/μs
R07DS0897EJ0300Rev.3.00
Jan 29, 2014
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