RJQ6021DPM Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 600V - 10A - IGBT High Speed Power Switching

RJQ6021DPM
600V - 10A - IGBT
High Speed Power Switching
Features
• High speed switching
• Low on-state voltage
• Built in fast recovery diode in one package
Outline
RENESAS Package code: PRSS0005ZB-A)
(Package name: TO-3PFM)
Preliminary Datasheet
R07DS0650EJ0100
Rev.1.00
Jan 23, 2012
2
12345
Absolute Maximum Ratings
IGBT
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Junction temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
Diode
Item
Maximum reverse voltage
Continuous forward current
Peak surge forward current
Junction temperature
Storage temperature
1, 3
1. Anode
2. Cathode
3. Anode, Collector
5
4. Emitter
5. Gate
4
Symbol
V_CES
V_GES
I_C
I_C
I_C(peak) ^Note1
Tj
Tstg
Ratings
600
±30
20
10
40
150
–55 to +150
Symbol
V_RM
I_F
I_FSM
Tj
Tstg
Ratings
600
10
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
°C
°C
(Ta = 25°C)
Unit
V
A
A
°C
°C
R07DS0650EJ0100 Rev.1.00
Jan 23, 2012
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