RJQ6015DPM_15 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – 600V - 18A - IGBT and Diode Application: Inverter

Preliminary Datasheet
RJQ6015DPM
600V - 18A - IGBT and Diode
Application: Inverter
R07DS0848EJ0100
Rev.1.00
Jul 27, 2012
Features
 Short circuit withstand time (5 s typ.)
 Low collector to emitter saturation voltage
V_CE(sat) = 1.6 V typ. (at I_C = 37 A, V_GE = 15 V, Ta = 25°C)
 Built in fast recovery diode (100 ns typ.) in one package
 Trench gate and thin wafer technology
 High speed switching
t_f = 40 ns typ. (at V_CC = 300 V, V_GE = 15 V, I_C = 37 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0005ZB-A
(Package name: TO-3PFM-5)
2
IGBT1
Diode1
12345
1
IGBT2
Diode2
5
1. Gate (1)
2. Collector (1)
3
3. Emitter (1), Collector (2)
4. Emitter (2)
5. Gate (2)
4
Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage/diode reverse voltage
V_CES/V_R
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
V_GES
I_C ^Note1
I_C ^Note1
I_C(peak) ^Note3
I_DF ^Note1
I_DF(peak) ^Note3
P_C ^Note2
j-c
Junction to case thermal resistance (Diode)
j-cd
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Limited by Tj max.
2. Value at Tc = 25°C
3. Pulse width limited by maximum safe operating area.
Ratings
600
±30
37
18
150
20
150
50
2.5
4.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
Rev.1.00
Jul 27, 2012
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