RJQ6008DPM_15 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – 600V - 10A - IGBT and Diode High Speed Power Switching

RJQ6008DPM
600V - 10A - IGBT and Diode
High Speed Power Switching
Features
 Low collector to emitter saturation voltage
V_CE(sat) = 2.65 V typ. (I_C = 25 A, V_GE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching
Preliminary Datasheet
R07DS0847EJ0100
Rev.1.00
Jul 17, 2012
Outline
RENESAS Package code: PRSS0005ZB-A
(Package name: TO-3PFM-5)
2
Diode
3
IGBT
12345
5
4
1. NC
2. Cathode
3. Anode, Collector
4. Emitter
5. Gate
Absolute Maximum Ratings
IGBT
Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal impedance
V_CES
V_GES
I_C ^Note1
I_C ^Note1
I_C(peak) ^Note3
P_C ^Note2
j-c
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Limited by Tj max.
2. Value at Tc = 25°C
3. Pulse width limited by maximum safe operating area.
Ratings
600
±30
20
10
100
48
2.3
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0847EJ0100 Rev.1.00
Jul 17, 2012
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