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| RJQ6003DPM Datasheet, PDF (1/9 Pages) Renesas Technology Corp – 600V - 20A - IGBT and Diode High Speed Power Switching | |||
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Preliminary Datasheet
RJQ6003DPM
600V - 20A - IGBT and Diode
High Speed Power Switching
R07DS0846EJ0100
Rev.1.00
Aug 03, 2012
Features
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
ï· Built in fast recovery diode in one package
ï· Trench gate and thin wafer technology
ï· High speed switching
tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 ï, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0005ZB-A
(Package name: TO-3PFM-5)
2
Diode2
12345
IGBT1
3
Diode1
5
4
1. NC
2. Cathode
3. Anode, Collector
4. Emitter
5. Gate
Absolute Maximum Ratings
IGBT1, Diode1
Item
Symbol
Collector to emitter voltage/diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES/VR
VGES
IC Note1
IC Note1
IC(peak) Note3
IDF Note1
IDF(peak) Note3
PC Note2
ï±j-c
Junction to case thermal impedance (Diode)
ï±j-cd
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Limited by Tj max.
2. Value at Tc = 25°C
3. Pulse width limited by maximum safe operating area.
Ratings
600
±30
40
20
160
20
100
50
2.5
4.5
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0846EJ0100Rev.1.00
Aug 03, 2012
Page 1 of 8
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