RJP65T54DPM-E0 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Partial switching circuit

RJP65T54DPM-E0
650V - 30A - IGBT
Application: Partial switching circuit
Features
 Low collector to emitter saturation voltage
V_CE(sat) = 1.35 V typ. (at I_C = 30 A, V_GE = 15 V, Ta = 25°C)
 Isolated package
 Trench gate and thin wafer technology (G7H series)
 High speed switching
 Operation frequency (50Hz ≤ f ˂ 20kHz)
Outline
RENESAS Package code: PRSS0003ZD-A
(Package name: TO-3PF)
Preliminary Datasheet
R07DS1307EJ0100
Rev.1.00
Nov 02, 2015
C
1
23
1. Gate
G
2. Collector
3. Emitter
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
VCES
VGES
IC
IC
iC(peak) ^Note1
PC
j-c
Tj ^Note2
650
30
60
30
225
55.5
2.7
175
V
V
A
A
A
W
°C/W
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW  10 µs, duty cycle  1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1307EJ0100 Rev.1.00
Nov 02, 2015
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