RJP65T54DPM-A0 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 650V - 30A - IGBT

Data Sheet
RJP65T54DPM-A0
650V - 30A - IGBT
Application: Partial switching circuit
R07DS1365EJ0110
Rev.1.10
Dec 19, 2016
Features
 Low collector to emitter saturation voltage
V_CE(sat) = 1.35 V typ. (at I_C = 30 A, V_GE = 15 V, Ta = 25°C)
 Isolated package
 Trench gate and thin wafer technology (G7H series)
 High speed switching
 Operation frequency (50Hz ≤ f ˂ 20kHz)
 Not guarantee short circuit withstand time
Outline
RENESAS Package code: PRSS0003ZP-A
(Package name: TO-3PFP)
C
1. Gate
G
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal resistance
Junction temperature
Storage temperature
Symbol
VCES
VGES
IC
IC
iC(peak) ^Note1
PC
j-c
Tj ^Note2
Tstg
Ratings
650
30
60
30
225
63.5
2.35
175
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect
a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of
Semiconductor Devices) and individual reliability data.
R07DS1365EJ0110 Rev.1.10
Dec 19, 2016
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