RJP65T43DPQ-A0 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 650V - 30A - IGBT

RJP65T43DPQ-A0
650V - 30A - IGBT
Application: Power Factor Correction circuit
Data Sheet
R07DS1376EJ0100
Rev. 1.00
Feb 24, 2017
Features
 Low collector to emitter saturation voltage
V_CE(sat) = 1.8 V typ. (at I_C = 20 A, V_GE = 15 V, Ta = 25°C)
 Trench gate and thin wafer technology (G7H series)
 High speed switching
t_f = 45 ns typ. (at V_CC = 400V, V_GE = 15V, IC=20A, Rg = 10, Ta = 25C, Inductive load)
 Operation frequency (20kHz ≤ f ˂ 100kHz)
Rating of collector current I_C = 30A (at Tc = 100C)
 Not guarantee short circuit withstand time
Key Nominal Performance
Type
RJP65T43DPQ-A0
VCES
650V
IC
20A
VCE(sat), Ta=25°C
1.8V
Tj
175°C
Marking
RJP65T43
Package
TO-247A
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal resistance
Junction temperature
Storage temperature
1. Gate
G
2. Collector
3. Emitter
4. Collector
E
Symbol
VCES
VGES
IC
IC
iC(peak) ^Note1
PC
j-c
Tj ^Note2
Tstg
Ratings
650
30
60
30
150
150
1.0
175
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect
a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of
Semiconductor Devices) and individual reliability data.
R07DS1376EJ0100 Rev. 1.00
Feb 24, 2017
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