RJP65T43DPM Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Power Factor Correction circuit

Preliminary Datasheet
RJP65T43DPM
650V - 20A - IGBT
Application: Power Factor Correction circuit
R07DS1201EJ0100
Rev.1.00
Apr 23, 2014
Features
• Low collector to emitter saturation voltage
V_CE(sat) = 1.8 V typ. (at I_C = 20 A, V_GE = 15 V, Ta = 25°C)
• Isolated package
• Trench gate and thin wafer technology (G7H series)
• High speed switching
t_f = 45 ns typ. (at V_CC = 400 V, V_GE = 15 V , I_C = 20 A, Rg = 10 Ω, Ta = 25°C, Inductive load)
• Operation frequency (20kHz ≤ f ˂ 100kHz)
• Not guarantee short circuit withstand time
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
1
2
3
1. Gate
G
2. Collector
3. Emitter
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
V_CES
650
V
Gate to emitter voltage
V_GES
±30
V
Collector current
Tc = 25 °C
I_C ^Note1
40
A
Tc = 100 °C
I_C ^Note1
20
A
Collector peak current
ic(peak)^Note1
150
A
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction temperature
P_C
θj-c^Note2
Tj ^Note3
68.8
2.18
175
W
°C/W
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C
3. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
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