RJP65S07DWT_15 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 650V - 150A - IGBT Application: Inverter

RJP65S07DWT / RJP65S07DWA
650V - 150A - IGBT
Application: Inverter
Features
 Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 150 A, VGE = 15 V, Tc = 25C)
 High speed Switching
 Short circuit withstands time (10 s min.)
Outline
Datasheet
R07DS0824EJ0400
Rev.4.00
Mar 11, 2015
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP65S07DWT-80
3
3
1
3
3
Wafer: RJP65S07DWA-80
2
Absolute Maximum Ratings
(Tc = 25°C unless otherwise noted)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
VGES
IC
IC
Tj
650
V
±30
V
300
A
150
A
175 ^Note1
C
Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175C.
R07DS0824EJ0400 Rev.4.00
Mar 11, 2015
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