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| RJP65S04DWT_15 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 650V - 50A - IGBT Application: Inverter | |||
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RJP65S04DWT / RJP65S04DWA
650V - 50A - IGBT
Application: Inverter
Features
⢠Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
⢠High speed Switching
⢠Short circuit withstands time (10 μs min.)
Outline
Datasheet
R07DS0821EJ0300
Rev.3.00
Oct 20, 2014
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP65S04DWT-80
3
1
3
Wafer: RJP65S04DWA-80
2
Absolute Maximum Ratings
(Tc = 25°C unless otherwise noted)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
VGES
IC
IC
Tj
650
V
±30
V
100
A
50
A
175 Note1
°C
Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175°C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175°C.
R07DS0821EJ0300 Rev.3.00
Oct 20, 2014
Page 1 of 3
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