RJP65S03DWT Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 650V - 30A - IGBT Application: Inverter

Preliminary Datasheet
RJP65S03DWT/RJP65S03DWA
650V - 30A - IGBT
Application: Inverter
R07DS0820EJ0002
Rev.0.02
Aug 09, 2012
Features
 Low collector to emitter saturation voltage
V_CE(sat) = 1.6 V typ. (at I_C = 30 A, V_GE = 15 V, Ta = 25C)
 High speed Switching
 Short circuit withstands time (10 s min.)
Outline
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP65S03DWT-80
3
1
3
Wafer: RJP65S03DWA-80
2
Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
V_CES
V_GES
I_C ^Note1
I_C ^Note1
Tj
Notes: 1. This data is a regulated value in evaluation package.
Ratings
650
±30
60
30
150
(Ta = 25°C)
Unit
V
V
A
A
C
R07DS0820EJ0002 Rev.0.02
Aug 09, 2012
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