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| RJP65M06DWA_15 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Inverter | |||
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RJP65M06DWA / RJP65M06DWS
650V - 100A - IGBT
Application: Inverter
Features
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.55 V typ. (at IC = 100 A, VGE = 15 V, Tc = 25ï°C)
ï· High speed Switching
ï· Short circuit withstands time
tsc = 5 ïs min. (at VCC ï£ 400 V , VGE = 15 V, Tj = 150 ï°C)
Outline
Datasheet
R07DS1314EJ0100
Rev.1.00
Nov. 06, 2015
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP65M06DWT-80
3
1
3
3
Wafer: RJP65M06DWA-80
2
Absolute Maximum Ratings
( Tc = 25°C unless otherwise described )
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
650
V
VGES
±30
V
IC Note1
200
A
IC Note1
100
A
Tj
175NOTE1
ï°C
Note 1 : Please use this device in the thermal conditions where the junction temperature does not exceed 175ï°C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj=175ï°C.
R07DS1314EJ0100 Rev.1.00
Nov. 06, 2015
Page 1 of 3
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