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| RJP65D05DWA Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Inverter | |||
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RJP65D05DWA / RJP65D05DWS
650V - 30A - IGBT
Application: Inverter
Features
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.45 V typ. (at IC = 30 A, VGE = 15 V, Tc = 25ï°C)
ï· High speed Switching
ï· Short circuit withstands time
tsc = 3 ïs min. (at VCC ï£ 400 V, Tc=150ï°C).
Outline
Datasheet
R07DS1311EJ0100
Rev.1.00
Nov. 06, 2015
Die: RJP65D05DWT-80
Wafer: RJP65D05DWA-80
2
C
2
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
1
3
Absolute Maximum Ratings
(Tc = 25°C unless otherwise noted)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
VGES
IC
IC
Tj
650
V
±30
V
60
A
30
A
175Note1
ï°C
Note 1: Please use this device in the thermal conditions where the junction temperature does not exceed 175°C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175°C.
R07DS1311EJ0100 Rev.1.00
Nov. 06, 2015
Page 1 of 3
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