RJP63K2DPK-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High speed power switching

RJP63K2DPK-M0
Silicon N Channel IGBT
High speed power switching
Features
 Trench gate and thin wafer technology (G6H-II series)
 Low collector to emitter saturation voltage: V_CE(sat) = 1.9 V typ
 High speed switching: t_r = 60 ns typ, t_f = 200 ns typ.
 Low leak current: I_CES = 1 A max
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
G
1
23
Preliminary Datasheet
R07DS0469EJ0200
Rev.2.00
Jun 15, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Tc = 25C
Symbol
V_CES
V_GES
Ic
ic(peak) ^Note1
P_C ^Note2
j-c
Tj
Tstg
Ratings
630
±30
35
200
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0469EJ0200 Rev.2.00
Jun 15, 2011
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