RJP60V0DPM Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 600V - 22A - IGBT Application: Inverter

RJP60V0DPM
600V - 22A - IGBT
Application: Inverter
Features
 High breakdown-voltage
 Low Collector to Emitter saturation Voltage
V_CE(sat) = 1.5 V typ. (at I_C = 22 A, V_GE = 15 V, Ta = 25°C)
 Short circuit withstand time (6 s typ.)
 Trench gate and thin wafer technology (G6H series)
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
1
2
3
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
Symbol
V_CES / V_R
V_GES
I_C
I_C
I_C(peak) ^Note1
P_C ^Note2
j-c ^Note2
Tj
Tstg
Preliminary Datasheet
R07DS0669EJ0100
Rev.1.00
Feb 07, 2012
C
1. Gate
2. Collector
3. Emitter
E
Ratings
600
±30
45
22
90
40
3.125
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0669EJ0100 Rev.1.00
Feb 07, 2012
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