RJP60V0DPM-80_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 600V - 22A - IGBT Application: Inverter

RJP60V0DPM-80
600V - 22A - IGBT
Application: Inverter
Features
• High breakdown-voltage
• Low collector to emitter saturation voltage
V_CE(sat) = 1.5 V typ. (at I_C = 22 A, V_GE = 15 V, Ta = 25°C)
• Short circuit withstand time (6 μs typ.)
• Trench gate and thin wafer technology (G6H series)
Outline
RENESAS Package code: PRSS0003ZD-A
(Package name: TO-3PF)
G
1
2
3
Preliminary Datasheet
R07DS1036EJ0200
Rev.2.00
Apr 02, 2014
C
1. Gate
2. Collector
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
V_CES / V_R
V_GES
I_C
I_C
I_C(peak) ^Note1
P_C ^Note2
θj-c ^Note2
Tj
Tstg
Ratings
600
±30
45
22
90
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS1036EJ0200 Rev.2.00
Apr 02, 2014
Page 1 of 7