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RJP60V0DPM-80 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 600V - 22A - IGBT Application: Inverter | |||
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RJP60V0DPM-80
600V - 22A - IGBT
Application: Inverter
Features
ï· High breakdown-voltage
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
ï· Short circuit withstand time (6 ïs typ.)
ï· Trench gate and thin wafer technology (G6H series)
Outline
RENESAS Package code: PRSS0003ZD-A
(Package name: TO-3PF)
G
1
2
3
Preliminary Datasheet
R07DS1036EJ0100
Rev.1.00
Mar 01, 2013
C
1. Gate
2. Collector
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
Symbol
VCES / VR
VGES
IC
IC
IC(peak) Note1
PC Note2
ï±j-c Note2
Tj
Tstg
Ratings
600
±30
45
22
90
60
2.08
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS1036EJ0100 Rev.1.00
Mar 01, 2013
Page 1 of 7
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