RJP60F7DPK Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V - 50A - IGBT High Speed Power Switching

Preliminary Datasheet
RJP60F7DPK
600V - 50A - IGBT
High Speed Power Switching
R07DS1001EJ0100
Rev.1.00
Jan 22, 2013
Features
 Low collector to emitter saturation voltage
V_CE(sat) = 1.35 V typ. (at I_C = 50 A, V_GE = 15 V, Ta = 25°C)
 Trench gate and thin wafer technology
 High speed switching
t_f = 74 ns typ. (at I_C = 30 A, V_CE = 400 V, V_GE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
12 ₃
1. Gate
G
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
V_CES
V_GES
I_C
I_C
ic(peak) ^Note1
P_C
j-c
Tj
Tstg
Ratings
600
±30
90
50
180
328.9
0.38
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS1001EJ0100 Rev.1.00
Jan 22, 2013
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