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RJP60F5DPM Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600 V - 40 A - IGBT High Speed Power Switching | |||
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RJP60F5DPM
600 V - 40 A - IGBT
High Speed Power Switching
Features
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
ï· Trench gate and thin wafer technology
ï· High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
1
2
3
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW ï£ 5 ïs, duty cycle ï£ 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
PC
ï±j-c
Tj
Tstg
Preliminary Datasheet
R07DS0587EJ0100
Rev.1.00
Nov 25, 2011
C
1. Gate
2. Collector
3. Emitter
E
Ratings
600
±30
80
40
160
45
2.78
150
â55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0587EJ0100 Rev.1.00
Nov 25, 2011
Page 1 of 6
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