RJP60F4DPM Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600 V - 30 A - IGBT High Speed Power Switching

RJP60F4DPM
600 V - 30 A - IGBT
High Speed Power Switching
Features
 Low collector to emitter saturation voltage
V_CE(sat) = 1.4 V typ. (at I_C = 30 A, V_GE = 15V, Ta = 25°C)
 Trench gate and thin wafer technology
 High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
1
2
3
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
V_CES
V_GES
I_C ^Note1
I_C ^Note1
ic(peak) ^Note1
P_C
j-c
Tj
Tstg
Preliminary Datasheet
R07DS0586EJ0100
Rev.1.00
Nov 25, 2011
C
1. Gate
2. Collector
3. Emitter
E
Ratings
600
30
60
30
120
41.2
3.03
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 1 of 6