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RJP60D0DPP-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching | |||
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RJP60D0DPP-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
ï· Short circuit withstand time (5 ïs typ.)
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
ï· Gate to emitter voltage rating ï±30 V
ï· Pb-free lead plating and chip bonding
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
G
1
23
Preliminary Datasheet
R07DS0173EJ0100
Rev.1.00
Mar 11, 2011
C
1. Gate
2. Collector
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
PC Note2
ï±j-c Note2
Tj
Tstg
Ratings
600
±30
45
22
90
35
3.57
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0173EJ0100 Rev.1.00
Mar 11, 2011
Page 1 of 6
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