RJP60D0DPE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJP60D0DPE
Silicon N Channel IGBT
High Speed Power Switching
Features
 Short circuit withstand time (5 s typ.)
 Low collector to emitter saturation voltage
V_CE(sat) = 1.6 V typ. (I_C = 22 A, V_GE = 15 V, Ta = 25°C)
 Gate to emitter voltage rating 30 V
 Pb-free lead plating and chip bonding
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
G
123
Preliminary Datasheet
R07DS0172EJ0100
Rev.1.00
Nov 15, 2010
C
1. Gate
2. Collector
3. Emitter
4. Collecotor
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
Symbol
V_CES
V_GES
I_C
I_C
ic(peak) ^Note1
P_C ^Note2
j-c ^Note2
Tj
Tstg
Ratings
600
±30
45
22
90
122
1.02
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0172EJ0100 Rev.1.00
Nov 15, 2010
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