RJP6085DPN Datasheet, PDF (1/6 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJP6085DPN
Silicon N Channel IGBT
High Speed Power Switching
Features
• High speed switching
• Low collector to emitter saturation voltage
Outline
RENESAS Package code: PRSS0004AC-A)
(Package name: TO-220AB)
4
C
REJ03G1863-0100
Rev.1.00
Nov 09, 2009
123
1. Gate
2. Collector
G
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C
Symbol
V_CES
V_GES
I_C
I_C(peak) ^Note1
P_C ^Note2
θj-c ^Note2
Tj
Tstg
Ratings
600
±30
40
80
178.5
0.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
REJ03G1863-0100 Rev.1.00 Nov 09, 2009
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